Patents/Inventors

Qintao Zhang

Mt Kisco, NYUS28 patents

27 Patents

US125785312026
Surface Roughness Reduction for Photonics Using High-temperature Implantation
Applied Materials, Inc.
0 cites
US125506862026
Wafer Total Thickness Variation Using Maskless Implant
Applied Materials, Inc.
0 cites
US125324502026
Method of Forming a 4F2 DRAM Including Buried Bitline
Applied Materials, Inc.
0 cites
US125324512026
DRAM Transistor Including Horizonal Body Contact
Applied Materials, Inc.
0 cites
US124577312025
Bottom Contact Formation for 4F 2 Vertical DRAM
Applied Materials, Inc.
0 cites
US124244822025
Selective Implantation Into STI of ETSOI Device
Applied Materials, Inc.
0 cites
US124127892025
Endpoint Optimization for Semiconductor Processes
Applied Materials, Inc.
0 cites
US123693122025
Vertical Finfet Formation Using Directional Deposition
Applied Materials, Inc.
0 cites
US123476872025
Etch Rate Modulation of Finfet Through High-temperature Ion Implantation
Applied Materials, Inc.
0 cites
US123082372025
Ion Implantation to Increase MOSFET Threshold Voltage
Applied Materials, Inc.
0 cites
US121837942024
MOSFET Gate Shielding Using an Angled Implant
Applied Materials, Inc.
0 cites
US120875852024
Low-temperature Implant for Buried Layer Formation
Applied Materials, Inc.
0 cites
US120464732024
Backside Wafer Dopant Activation
Applied Materials, Inc.
0 cites
US119555332024
Ion Implantation to Reduce Nanosheet Gate Length Variation
Applied Materials, Inc.
0 cites
US119487992024
Minority Carrier Lifetime Reduction for Sic IGBT Devices
Applied Materials, Inc.
0 cites
US119423242024
Method for BEOL Metal to Dielectric Adhesion
Applied Materials, Inc.
0 cites
US118814052024
Methods for Forming N-type Buried Layer in a Substrate by Performing Non-doping Implant Through Oxide Layer Formed Over the Substrate
Applied Materials, Inc.
0 cites
US118826952024
Vertical Field Effect Transistor Including Integrated Antifuse
Samsung Electronics Co., Ltd.
0 cites
US118759952024
Techniques and Apparatus for Anisotropic Stress Compensation in Substrates Using Ion Implantation
Applied Materials, Inc.
0 cites
US118045372023
Channeled Implants for Sic MOSFET Fabrication
Applied Materials, Inc.
0 cites
US117989822023
Self-aligned Trench MOSFET
Applied Materials, Inc.
0 cites
US117283832023
Localized Stressor Formation by Ion Implantation
Applied Materials, Inc.
0 cites
US117217432023
Implantation Enabled Precisely Controlled Source and Drain Etch Depth
Applied Materials, Inc.
0 cites
US116995702023
System and Method for Hi-precision Ion Implantation
Applied Materials, Inc.
0 cites
US116948972023
Backside Wafer Dopant Activation
Applied Materials, Inc.
0 cites
US116950602023
Ion Implantation to Form Trench-bottom Oxide of MOSFET
Applied Materials, Inc.
0 cites
US116109722023
Technique for Reducing Gate Induced Drain Leakage in DRAM Cells
Applied Materials, Inc.
0 cites