Patents/Inventors

Qiguang Wang

WuhanCN12 patents

14 Patents

US124904342025
Memory Device
Yangtze Memory Technologies Co., Ltd.
0 cites
US124712782025
Three-dimensional Memory Device with Charge Trap Layer Including Carbon Region and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites
US123174912025
Three-dimensional Memory Device and Fabrication Method for Enhanced Reliability
Yangtze Memory Technologies Co., Ltd.
0 cites
US122549252025
Control Method and Controller of 3D NAND Flash
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US120161802024
Manufacturing Method of Three-dimensional Memory Device with Improved RC Delay
Yangtze Memory Technologies Co., Ltd.
0 cites
US119486412024
Control Method and Controller of 3D NAND Flash
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US118715652024
Methods of Semiconductor Device Fabrication
Yangtze Memory Technologies Co., Ltd.
0 cites
US118390792023
Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US118390832023
3D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites
US118126112023
Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US117513892023
Three-dimensional Memory Device with Reduced Memory Unit Interference and Manufacturing Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites
US116964442023
Semiconductor Device and Method of Fabrication Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116721152023
Methods of Semiconductor Device Fabrication
Yangtze Memory Technologies Co., Ltd.
0 cites
US116659052023
Three-dimensional Memory Device and Manufacturing Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites