22 Patents
- US125931362026Brightness Detection Method and Apparatus, Control Method and Apparatus for Photographic Apparatus, and Medium
Shenzhen Microbt Electronics Technology Co., Ltd.
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- US125751052026Multiple-stack Three-dimensional Memory Device and Fabrication Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US125073952025Doped Titanium Nitride Materials for Dram Capacitors, and Related Semiconductor Devices
Micron Technology, Inc.
0 cites - US124904402025Three-dimensional Memory Devices and Fabricating Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124486572025Hericium Erinaceus Strain HE015, Molecular Markers and Uses Thereof
INSTITUTE OF MICROBIOLOGY, GUANGDONG ACADEMY OF SCIENCES(GUANGDONG DETECTION CENTER OF MICROBIOLOGY)
0 cites - US122971492025Multiphase Particle, Manufacturing Process and Use Thereof
PETROLEUM ENGINEERING RESEARCH INSTITUTE, SINOPEC
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- US120637802024Memory Cell Structure of a Three-dimensional Memory Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US119918802024Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US119688322024Multiple-stack Three-dimensional Memory Device and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US119439282024Method for Forming Channel Hole Plug of Three-dimensional Memory Device
Yangtze Memory Technologies Co., Ltd.
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- US118056432023Method of Fabrication Thereof a Multi-level Vertical Memory Device Including Inter-level Channel Connector
Yangtze Memory Technologies Co., Ltd.
0 cites - US118056462023Three-dimensional Memory Devices and Methods for Forming the Same
Yangtze Memory Technologies Co., Ltd.
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- US116996572023Three-dimensional Memory Devices Having a Plurality of NAND Strings Located Between a Substrate and a Single Crystalline Silicon Layer
Yangtze Memory Technologies Co., Ltd.
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