Patents/Inventors

Qi Xie

WilseleBE44 patents

41 Patents

US125710952026
Low Temperature Flowable Vanadium Oxide Gap Fill
ASM IP Holding B.V.
0 cites
US125639832026
Method of Forming Structures Including a Vanadium or Indium Layer
ASM IP Holding B.V.
0 cites
US125459992026
Method of Depositing Vanadium Metal
ASM IP Holding B.V.
0 cites
US125506392026
Methods and Systems for Forming a Layer Comprising Vanadium and Nitrogen
ASM IP Holding B.V.
0 cites
US124696952025
Methods and Systems for Forming a Layer Comprising Vanadium and Nitrogen
ASM IP Holding B.V.
0 cites
US124486832025
Method of Forming a Vanadium Nitride-containing Layer
ASM IP Holding B.V.
0 cites
US124354172025
Methods and Systems for Forming a Layer Comprising Vanadium and Oxygen
ASM IP Holding B.V.
0 cites
US124068462025
Method for Depositing Boron and Gallium Containing Silicon Germanium Layers
ASM IP Holding B.V.
0 cites
US124068812025
Methods and Systems for Filling a Gap
ASM IP Holding B.V.
0 cites
US124075082025
Traffic Accident Forensics Method Based on Blockchain
Hangzhou Normal University
0 cites
US123593152025
Deposition of Oxides and Nitrides
ASM IP Holding B.V.
0 cites
US123621712025
Methods and Systems for Forming a Layer Comprising Aluminum, Titanium, and Carbon
ASM IP Holding B.V.
0 cites
US123519022025
Methods and Systems for Delivery of Vanadium Compounds
ASM IP Holding B.V.
0 cites
US122929972025
Inter-hospital Electronic Medical Record Access Authentication Protocol Based on Blockchains
Hangzhou Normal University
0 cites
US122665242025
Method for Depositing Boron Containing Silicon Germanium Layers
ASM IP Holding B.V.
0 cites
US122666952025
Structures with Doped Semiconductor Layers and Methods and Systems for Forming Same
ASM IP Holding B.V.
0 cites
US122592782025
Temperature Measurement Method and Electronic Device
HUAWEI TECHNOLOGIES CO., Ltd.
0 cites
US122437472025
Methods of Forming Structures Including Vanadium Boride and Vanadium Phosphide Layers
ASM IP Holding B.V.
0 cites
US122371712025
Method of Forming Vanadium Nitride Layer and Structure Including the Vanadium Nitride Layer
ASM IP Holding B.V.
0 cites
US122154162025
Methods for Depositing a Molybdenum Nitride Film on a Surface of a Substrate by a Cyclical Deposition Process and Related Semiconductor Device Structures Including a Molybdenum Nitride Film
ASM IP Holding B.V.
0 cites
US121597882024
Method of Forming Structures for Threshold Voltage Control
ASM IP Holding B.V.
0 cites
US121192282024
Deposition Method
ASM IP Holding B.V.
0 cites
US120949362024
Methods for Forming a Metal Silicate Film on a Substrate in a Reaction Chamber and Related Semiconductor Device Structures
ASM IP Holding B.V.
0 cites
US120875862024
Method of Forming Chromium Nitride Layer and Structure Including the Chromium Nitride Layer
ASM IP Holding B.V.
0 cites
US120617892024
Image Sharing Method and Electronic Device
HUAWEI TECHNOLOGIES CO., Ltd.
0 cites
US120312062024
Methods and Systems for Forming a Layer Comprising a Transitional Metal and a Group 13 Element
ASM IP Holding, B.V.
0 cites
US120092242024
Apparatus and Method for Etching Metal Nitrides
ASM IP Holding B.V.
0 cites
US119461572024
Method for Depositing Boron Containing Silicon Germanium Layers
ASM IP Holding B.V.
0 cites
US119087362024
Methods for Depositing a Molybdenum Metal Film Over a Dielectric Surface of a Substrate by a Cyclical Deposition Process and Related Semiconductor Device Structures
ASM IP Holding B.V.
0 cites
US118982432024
Method of Forming Vanadium Nitride-containing Layer
ASM IP Holding B.V.
0 cites
US118850132024
Method of Forming Vanadium Nitride Layer and Structure Including the Vanadium Nitride Layer
ASM IP Holding B.V.
0 cites
US118878572024
Methods and Systems for Depositing a Layer Comprising Vanadium, Nitrogen, and a Further Element
ASM IP Holding B.V.
0 cites
US118735572024
Method of Depositing Vanadium Metal
ASM IP Holding B.V.
0 cites
US118279782023
Methods for Depositing a Molybdenum Nitride Film on a Surface of a Substrate by a Cyclical Deposition Process and Related Semiconductor Device Structures Including a Molybdenum Nitride Film
ASM IP Holding B.V.
0 cites
US117989992023
Methods for Forming a Metal Silicate Film on a Substrate in a Reaction Chamber and Related Semiconductor Device Structures
ASM IP Holding B.V.
0 cites
US117812432023
Method for Depositing Low Temperature Phosphorous-doped Silicon
ASM IP Holding B.V.
0 cites
US117228872023
Privacy Protection Authentication Method Based on Wireless Body Area Network
HANGZHOU NORMAL UNIVERSITY
0 cites
US116462052023
Methods of Selectively Forming N-type Doped Material on a Surface, Systems for Selectively Forming N-type Doped Material, and Structures Formed Using Same
ASM IP Holding B.V.
0 cites
US116370142023
Methods for Selective Deposition of Doped Semiconductor Material
ASM IP Holding B.V.
0 cites
US115946002023
Structures with Doped Semiconductor Layers and Methods and Systems for Forming Same
ASM IP Holding B.V.
0 cites
US115812202023
Methods for Depositing a Molybdenum Metal Film Over a Dielectric Surface of a Substrate by a Cyclical Deposition Process and Related Semiconductor Device Structures
ASM IP Holding B.V.
0 cites