15 Patents
- US120949232024Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Memory Devices
Kepler Computing Inc.
0 cites - 0 cites
- US120290432024Planar and Trench Capacitors with Hydrogen Barrier Dielectric for Logic and Memory Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US120226622024Planar and Trench Capacitors for Logic and Memory Applications and Methods of Fabrication
Kepler Computing Inc.
0 cites - 0 cites
- US119964382024Pocket Flow for Trench Capacitors Integrated with Planar Capacitors on a Same Substrate and Method of Fabrication
Kepler Computing Inc.
0 cites - US119858322024Planar and Trench Capacitors with Hydrogen Barrier Dielectric for Logic and Memory Applications
Kepler Computing Inc.
0 cites - US119618772024Dual Hydrogen Barrier Layer for Trench Capacitors Integrated with Low Density Film for Logic Structures
KEPLER COMPUTING Inc.
0 cites - US119555122024Dual Hydrogen Barrier Layer for Trench Capacitors Integrated with Low Density Film for Logic Structures and Methods of Fabrication
Kepler Computing Inc.
0 cites - US119087042024Method of Fabricating a Perovskite-material Based Planar Capacitor Using Rapid Thermal Annealing (RTA) Methodologies
KEPLER COMPUTING Inc.
0 cites - US118944172024Method of Fabricating a Perovskite-material Based Trench Capacitor Using Rapid Thermal Annealing (RTA) Methodologies
KEPLER COMPUTING Inc.
0 cites - US118106082023Manganese or Scandium Doped Multi-element Non-linear Polar Material Gain Memory Bit-cell
KEPLER COMPUTING Inc.
0 cites - US117697902023Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Trench Capacitors
KEPLER COMPUTING Inc.
0 cites - US116054112023Method of Forming Stacked Ferroelectric Planar Capacitors in a Memory Bit-cell
Kepler Computing Inc.
0 cites - US115452042023Non-linear Polar Material Based Memory Bit-cell with Multi-level Storage by Applying Different Voltage Levels
Kepler Computing Inc.
0 cites