30 Patents
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- US125720672026Guiding Structures for Fabrication of Angled Features in a Semiconductor Device
International Business Machines Corporation
0 cites - US125639722026Magnetic Tunnel Junction Pillar Formation for MRAM Device
International Business Machines Corporation
0 cites - US125588352026Fabrication of Asymmetric Mandrel Structures in Semiconductor Device
International Business Machines Corporation
0 cites - US125506252026MRAM with Doped Silicon-germanium-tin Alloy Electrodes
International Business Machines Corporation
0 cites - US124023422025Nanosheet Device with T-shaped Dual Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US123619952025Spin-orbit-torque (SOT) MRAM with Doubled Layer of SOT Metal
International Business Machines Corporation
0 cites - US122258352025Resistive Switching Device Having a Protective Electrode Ring
International Business Machines Corporation
0 cites - US121913522025Using Different Work-functions to Reduce Gate-induced Drain Leakage Current in Stacked Nanosheet Transistors
International Business Machines Corporation
0 cites - US121366712024Gate-all-around Field-effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion
International Business Machines Corporation
0 cites - US120638672024Dual Spacer for Double Magnetic Tunnel Junction Devices
International Business Machines Corporation
0 cites - US120207362024Spin-orbit-torque Magnetoresistive Random-access Memory Array
International Business Machines Corporation
0 cites - US119800392024Wide-base Magnetic Tunnel Junction Device with Sidewall Polymer Spacer
International Business Machines Corporation
0 cites - US119727852024MRAM Structure with Enhanced Magnetics Using Seed Engineering
International Business Machines Corporation
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- US119375122024Magnetic Tunnel Junction Device with Air Gap
International Business Machines Corporation
0 cites - US119157342024Spin-orbit-torque Magnetoresistive Random-access Memory with Integrated Diode
International Business Machines Corporation
0 cites - US118551482023Vertical Field Effect Transistor with Dual Threshold Voltage
International Business Machines Corporation
0 cites - US118442842023On-chip Integration of a High-efficiency and a High-retention Inverted Wide-base Double Magnetic Tunnel Junction Device
International Business Machines Corporation
0 cites - US118308772023Co-integrated Channel and Gate Formation Scheme for Nanosheet Transistors Having Separately Tuned Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117840962023Vertical Transport Field-effect Transistors Having Germanium Channel Surfaces
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US117569962023Formation of Wrap-around-contact for Gate-all-around Nanosheet FET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117424252023Finfet Device with Partial Interface Dipole Formation for Reduction of Gate Induced Drain Leakage
International Business Machines Corporation
0 cites - US117372892023High Density Reram Integration with Interconnect
International Business Machines Corporation
0 cites - US116978892023Three-dimensionally Stretchable Single Crystalline Semiconductor Membrane
International Business Machines Corporation
0 cites - US116463622023Vertical Transport Field-effect Transistor Structure Having Increased Effective Width and Self-aligned Anchor for Source/drain Region Formation
International Business Machines Corporation
0 cites - US115694382023Magnetoresistive Random-access Memory Device
International Business Machines Corporation
0 cites - US115630822023Reduction of Drain Leakage in Nanosheet Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
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