Poornima Venkatasubramanian

4 Patents

• US125674612026

  Memory Device and Operation to Reduce Impact of Parasitic Wire Resistance and Capacitance

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US124511692025

  Memory Device Including Voltage and Temperature Sensing Circuit and Method for Managing Operation Thereof

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US122056362025

  Write Assist Circuit for Static Random-access Memory (SRAM)

  Samsung Electronics Co., Ltd.

  0 cites
• US120873872024

  Methods and Systems for Managing Read Operation of Memory Device with Single Ended Read Path

  Samsung Electronics Co., Ltd.

  0 cites