Po-yu Lin

9 Patents

• US124577702025

  Source and Drain Engineering Process for Multigate Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US124023642025

  Semiconductor Device Structure and Method for Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US123026152025

  Epitaxial Structures Exposed in Airgaps for Semiconductor Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122680232025

  Devices with Improved Operational Current and Reduced Leakage Current

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US121913692025

  Source and Drain Engineering Process for Multigate Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US121702022024

  Formation and In-situ Etching Processes for Metal Layers

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US120517322024

  Semiconductor Structure and Method for Forming the Same

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US119234092024

  Epitaxial Structures Exposed in Airgaps for Semiconductor Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US115453632023

  Formation and In-situ Etching Processes for Metal Layers

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites