Po-lin Peng

10 Patents

• US124330342025

  Integrated Circuit Device and Method for ESD Protection

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US123962562025

  Semiconductor Device Including Transistors Sharing Gates with Structures Having Reduced Parasitic Circuit

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US120948712024

  Integrated Circuit with Electrostatic Discharge Protection

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US120516912024

  Planar and Non-planar Fet-based Electrostatic Discharge Protection Devices

  Taiwan Semiconductor Manufacturing Co., Ltd.

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• US120518962024

  Device and Method for Operating the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US119618342024

  Semiconductor Device Having Multiple Electrostatic Discharge (ESD) Paths

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US119293632024

  Semiconductor Device Having Multiple Electrostatic Discharge (ESD) Paths

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US119088592024

  Semiconductor Device Including Transistors Sharing Gates with Structures Having Reduced Parasitic Circuit

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US118550882023

  Semiconductor Device Including Transistors Sharing Gates with Structures Having Reduced Parasitic Circuit

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US117109622023

  Device and Method for Operating the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites