Po-kang Wang

5 Patents

• US121677012024

  Magnetic Tunnel Junction with Low Defect Rate After High Temperature Anneal for Magnetic Device Applications

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US116965112023

  Low Resistance Mgo Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US115732702023

  Electrical Testing Apparatus for Spintronics Devices

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US115694412023

  Maintaining Coercive Field After High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anistropy

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US115631702023

  Fully Compensated Synthetic Ferromagnet for Spintronics Applications

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites