12 Patents
- US124190742025Barrier Structure Configured to Increase Performance of III-V Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US122782722025Source Leakage Current Suppression by Source Surrounding Gate Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121071562024Semiconductor Structure, HEMT Structure and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US120948382024Crack Stop Ring Trench to Prevent Epitaxy Crack Propagation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120465372024Front-end-of-line (FEOL) Through Semiconductor-on-substrate via (TSV)
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118626752024High Voltage Metal-oxide-semiconductor (HVMOS) Device Integrated with a High Voltage Junction Termination (HVJT) Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117962762023Gun0 cites
- US117988992023Crack Stop Ring Trench to Prevent Epitaxy Crack Propagation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117913882023Source Leakage Current Suppression by Source Surrounding Gate Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117157922023Barrier Structure Configured to Increase Performance of III-V Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites