66 Patents
- US126044522026Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US125881802026Four-poly-pitch SRAM Cell with Backside Metal Tracks
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US125881822026Multi-port SRAM Cell with Metal Interconnect Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125637132026Memory Device with Jogged Backside Metal Lines
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US125504082026Connection Between Gate and Source/drain Feature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US125016262025Magnetic Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124955342025Epitaxial Features in Semiconductor Devices and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124955472025Controlling Trap Formation to Improve Memory Window in One-time Program Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124955792025Semiconductor Device with Leakage Current Suppression and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124462842025Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124262262025Macro and SRAM Bit Cell Cooptimizatoin for Performance (long/shortwordline Combo SRAM)
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites - US124191972025Memory Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124022922025Static Random Access Memory with Magnetic Tunnel Junction Cells
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites - US123762772025Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
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- US123493292025Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123493302025Shared Pick-up Regions for Memory Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123025432025Integrated Circuit Device with Reduced via Resistance
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123026092025Semiconductor Device Including Alternating Semiconductor Layers with Different Widths and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122740452025Well Pick-up Region Design for Improving Memory Macro Performance
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122565282025Compact Static Random-access Memory Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122496362025Tuning Gate Lengths in Multi-gate Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122439122025Source/drain Feature for Multigate Device Performance and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122197472025Memory Active Region Layout for Improving Memory Performance
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122009212025Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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- US120876332024Multi-gate Field-effect Transistors and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120803422024Static Random Access Memory (SRAM) with a Pre- Charge Assist Circuit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120806022024Semiconductor Device with Fin Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120575052024Semiconductor Device Having Fin Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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- US120481352024Four-poly-pitch SRAM Cell with Backside Metal Tracks
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120226642024Magnetic Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US119688172024Source/drain Contact Having a Protruding Segment
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119617692024Structure and Process of Integrated Circuit Having Latch-up Suppression
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US119569482024Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119088602024Integrated Chip with Improved Latch-up Immunity
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119105852024Well Pick-up Region Design for Improving Memory Macro Performance
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US118567452023Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118567682023Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117770162023Method of Forming Backside Power Rails
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117513752023Static Random Access Memory with Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - US117372602023Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117106632023Semiconductor Device with Fin Structures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116759492023Space Optimization Between SRAM Cells and Standard Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US116417292023Manufacturing Method of Static Random Access Memory Cell
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116212672023Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US116006232023Well Pick-up Region Design for Improving Memory Macro Performance
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116006252023Semiconductor Device Having an Offset Source/drain Feature and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115630132023Memory Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites