Patents/Inventors

Philippe Boivin

VenellesFR14 patents

15 Patents

US124844602025
Phase-change Memory Cell Having a Compact Structure
STMICROELECTRONICS (ROUSSET) SAS
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US123427342025
Phase-change Memory
STMICROELECTRONICS (ROUSSET) SAS
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US122626492025
Phase-change Memory
STMICROELECTRONICS (ROUSSET) SAS
0 cites
US122324352025
Chip Containing an Onboard Non-volatile Memory Comprising a Phase-change Material
Stmicroelectronics (Rousset) SAS
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US122133922025
Insulation of Phase-change Memory Cells
Stmicroelectronics (Rousset) SAS
0 cites
US121760302024
Self-referenced and Regulated Sensing Solution for Phase Change Memory with Ovonic Threshold Switch
Stmicroelectronics (Rousset) SAS
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US120966402024
Resistive Memory Cell Having an Ovonic Threshold Switch
Stmicroelectronics (Rousset) SAS
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US120044322024
Phase-change Memory
STMICROELECTRONICS (ROUSSET) SAS
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US119570672024
Phase-change Memory Cell Having a Compact Structure
STMICROELECTRONICS (ROUSSET) SAS
0 cites
US118827072024
Integrated Circuit Including Transistors Having a Common Base
Stmicroelectro (Rousset) SAS
0 cites
US118758472024
Self-referenced and Regulated Sensing Solution for Phase Change Memory with Ovonic Threshold Switch
Stmicroelectronics (Rousset) SAS
0 cites
US118189012023
Integrated Circuit Including Bipolar Transistors
Stmicroelectronics (Crolles 2) SAS
0 cites
US118008212023
Phase-change Memory with an Insulating Layer on a Cavity Sidewall
STMICROELECTRONICS (ROUSSET) SAS
0 cites
US116535822023
Chip Containing an Onboard Non-volatile Memory Comprising a Phase-change Material
Stmicroelectronics (Rousset) SAS
0 cites
US116371442023
Method of Forming Resistive Memory Cell Having an Ovonic Threshold Switch
0 cites