16 Patents
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- US122886922025Method of Forming a FET Structure by Selective Deposition of Film on Source/drain Contact
TOKYO ELECTRON LIMITED
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- US121892972025Methods for Extreme Ultraviolet (EUV) Resist Patterning Development
Tokyo Electron Limited
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- US120572932024Methods for Real-time Pulse Measurement and Pulse Timing Adjustment to Control Plasma Process Performance
Tokyo Electron Limited
0 cites - US120149012024Tailored Electron Energy Distribution Function by New Plasma Source: Hybrid Electron Beam and RF Plasma
Tokyo Electron Limited
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