Patents/Inventors

Peter Lowell George Ventzek

Austin, TXUS36 patents

22 Patents

US126205552026
Systems and Methods for Plasma Process
TOKYO ELECTRON LIMITED
0 cites
US126032492026
Selective Deposition Using Differential Surface Charging
Tokyo Electron Limited
0 cites
US125801532026
Balanced Resonator Source for Plasma Processing
Tokyo Electron Limited
0 cites
US125557562026
System and Method to Measure Ion Properties in a Plasma System
Tokyo Electron Limited
0 cites
US125312052026
Equipment and Method for Improved Edge Uniformity of Plasma Processing of Wafers
Tokyo Electron Limited
0 cites
US125000672025
Apparatus for Edge Control During Plasma Processing
Tokyo Electron Limited
0 cites
US124871822025
Non-intrusive Method for 2D/3D Mapping Plasma Parameters
Tokyo Electron Limited
0 cites
US124513292025
Plasma Processing Apparatus with Tunable Electrical Characteristic
TOKYO ELECTRON LIMITED
0 cites
US124127482025
Plasma Processing with Magnetic Ring X Point
Tokyo Electron Limited
0 cites
US124008652025
Pulsed Capacitively Coupled Plasma Processes
Tokyo Electron Limited
0 cites
US123946002025
Balanced RF Resonant Antenna System
Tokyo Electron Limited
0 cites
US123879192025
ALD Process with Plasma Treatment
Tokyo Electron Limited
0 cites
US123879102025
Plasma Processing with Broadband RF Waveforms
Tokyo Electron Limited
0 cites
US123004682025
Method of Uniformity Control
Tokyo Electron Limited
0 cites
US122241602025
Topographic Selective Deposition
Tokyo Electron Limited
0 cites
US122179352025
Plasma Processing Methods Using Multiphase Multifrequency Bias Pulses
Tokyo Electron Limited
0 cites
US121835832024
Remote Source Pulsing with Advanced Pulse Control
Tokyo Electron Limited
0 cites
US121762042024
Cyclic Low Temperature Film Growth Processes
Tokyo Electron Limited
0 cites
US120209022024
Plasma Processing with Broadband RF Waveforms
Tokyo Electron Limited
0 cites
US119423072024
Plasma Processing with Radio Frequency (RF) Source and Bias Signal Waveforms
Tokyo Electron Limited
0 cites
US117734842023
Hard Mask Deposition Using Direct Current Superimposed Radio Frequency Plasma
TOKYO ELECTRON LIMITED
0 cites
US115574872023
Etching Metal During Processing of a Semiconductor Structure
Tokyo Electron Limited
0 cites