Peter Baars

4 Patents

• US121130702024

  Transistor Integration on a Silicon-on-insulator Substrate

  Globalfoundries U.S. Inc.

  0 cites
• US119161092024

  Bipolar Transistor Structures with Base Having Varying Horizontal Width and Methods to Form Same

  Globalfoundries U.S. Inc.

  0 cites
• US118880622024

  Extended-drain Metal-oxide-semiconductor Devices with a Silicon-germanium Layer Beneath a Portion of the Gate

  Globalfoundries U.S. Inc.

  0 cites
• US117054552023

  High Voltage Extended Drain MOSFET (EDMOS) Devices in a High-k Metal Gate (HKMG)

  GLOBALFOUNDRIES U.S. Inc.

  0 cites