2 Patents
- US118551982023Multi-gate High Electron Mobility Transistors (hemts) Employing Tuned Recess Depth Gates for Improved Device Linearity
QUALCOMM INCORPORATED
0 cites - US115455552023Gate-all-around (GAA) Transistors with Shallow Source/drain Regions and Methods of Fabricating the Same
QUALCOMM INCORPORATED
0 cites