7 Patents
- US124263322025Introducing Fluorine to Gate After Work Function Metal Deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123763642025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362732025Method for Forming Semiconductor Structure Using Fluorine to Treat Gate Stack
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120403652024Incorporating Nitrogen in Dipole Engineering for Multi-threshold Voltage Applications in Stacked Device Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119964532024Introducing Fluorine to Gate After Work Function Metal Deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119159792024Gate Structures in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117568322023Gate Structures in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites