18 Patents
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- US122887212025Fin Bending Reduction Through Structure Design
Taiwan Semiconductor Manufacturing Co., Ltd.
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- US121702282024Semiconductor Device and Methods of Manufacturing
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120947782024Fin Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120878452024System and Methods of Manufacturing Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120683952024Method for Forming an Undoped Region Under a Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120149222024Apparatus for Manufacturing a Thin Film and a Method Therefor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120028542024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119488402024Protective Layer Over Finfet and Method of Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US118551422023Supportive Layer in Source/drains of Finfet Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US117356682023Interfacial Layer Between Fin and Source/drain Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117107772023Semiconductor Device and Method for Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US115814252023Method for Manufacturing Semiconductor Structure with Enlarged Volumes of Source-drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites