27 Patents
- US126045152026Semiconductor Device Structure with Inner Spacer Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125325062026Gate-all-around Structure and Methods of Forming the Same
Parabellum Strategic Opportunities Fund LLC
0 cites - US124396382025FET with Wrap-around Silicide and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123826552025Transistors Having Vertical Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US122437802025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122182262025Methods of Fabricating Semiconductor Devices Having Gate-all-around Structure with Inner Spacer Last Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122119002025Hybrid Channel Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121989862025Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121486732024Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121488362024Gate-all-around Structure and Methods of Forming the Same
Parabellum Strategic Opportunities Fund LLC
0 cites - US121192702024Hybrid Source Drain Regions Formed Based on Same Fin and Methods Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121194042024Gate All Around Structure with Additional Silicon Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119964832024FET with Wrap-around Silicide and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119843612024Multi-gate Devices and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118552162023Inner Spacers for Gate-all-around Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118375062023Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117768542023Semiconductor Structure with Hybrid Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117770332023Transistors Having Vertical Nanostructures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117423872023Hybrid Channel Semiconductor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117356662023Gate All Around Structure with Additional Silicon Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117215942023Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US116950762023FET with Wrap-around Silicide and Fabrication Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116372072023Gate-all-around Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116005292023Multi-gate Devices and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115631042023Semiconductor Devices Having Air-gap Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites