12 Patents
- US124943752025Method to Selectively Etch Silicon Nitride to Silicon Oxide Using Surface Alkylation
Tokyo Electron Limited
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- US124446062025Methods for Forming Vertically Layered Ionic Liquid Crystal (ILC) Structures on a Semiconductor Substrate
Tokyo Electron Limited
0 cites - US124446102025Methods for Etching a Substrate Using a Hybrid Wet Atomic Layer Etching Process
Tokyo Electron Limited
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- US122437522025Systems for Etching a Substrate Using a Hybrid Wet Atomic Layer Etching Process
Tokyo Electron Limited
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