11 Patents
- US125573472026Strained Semiconductor Using Elastic Edge Relaxation of a Stressor Combined with Buried Insulating Layer
Acorn Semi, LLC
0 cites - US124777762025Nanowire Transistor with Source and Drain Induced by Electrical Contacts with Negative Schottky Barrier Height
Acorn Semi, LLC
0 cites - 0 cites
- US123362632025Metal Contacts to Group IV Semiconductors by Inserting Interfacial Atomic Monolayers
Acorn Semi, LLC
0 cites - US120340782024Nanowire Transistor with Source and Drain Induced by Electrical Contacts with Negative Schottky Barrier Height
Acorn Semi, LLC
0 cites - US119788002024Strained Semiconductor Using Elastic Edge Relaxation of a Stressor Combined with Buried Insulating Layer
Acorn Semi, LLC
0 cites - 0 cites
- US118045332023Metal Contacts to Group IV Semiconductors by Inserting Interfacial Atomic Monolayers
Acorn Semi, LLC
0 cites - 0 cites
- US117286242023Tensile Strained Semiconductor Photon Emission and Detection Devices and Integrated Photonics System
Acorn Semi, LLC
0 cites - US116109742023Metal Contacts to Group IV Semiconductors by Inserting Interfacial Atomic Monolayers
Acorn Semi, LLC
0 cites