3 Patents
- US125674612026Memory Device and Operation to Reduce Impact of Parasitic Wire Resistance and Capacitance
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117909822023Circuits for Power Down Leakage Reduction in Random-access Memory
Samsung Electronics Co., Ltd.
0 cites - US117766232023Bitline Precharge System for a Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites