Patents/Inventors

Pankwi Park

Suwon-siKR35 patents

25 Patents

US126158182026
Semiconductor Transistor Devices Including Alternatively Stacked Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites
US126044922026
Semiconductor Device Including an Active Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125573622026
Semiconductor Device Including Source/drain Pattern with Varied Germanium Concentrations
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125433382026
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125385172026
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124777962025
Semiconductor Device Including a Vertically Stacked Channel Pattern and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US124713452025
Semiconductor Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US124531482025
Integrated Circuit Device Including Field-effect Transistor with Controlled Sizes and Configurations
Samsung Electronics Co., Ltd.
0 cites
US124531412025
Semiconductor Device Including Barrier Layer Between Active Region and Semiconductor Layer and Method of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US124263592025
Semiconductor Device Including Source/drain Regions Having Triangular Tip Regions
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123962242025
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123827162025
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US123289212025
Semiconductor Device and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US123241952025
Multi-channel Field Effect Transistors with Enhanced Multi-layered Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites
US122496062025
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122243572025
Semiconductor Transistor Device Including Multiple Channel Layers with Different Materials
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121193472024
Method of Manufacturing a Horizontal-nanosheet Field-effect Transistor
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120275962024
Semiconductor Device with Source/drain Pattern Including Buffer Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119964432024
Semiconductor Device Including Barrier Layer Between Active Region and Semiconductor Layer and Method of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US119489422024
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118880262024
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117107382023
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US116887782023
Semiconductor Device Including Three-dimensional Field-effect Transistor with Curved Multi-layered Source/drain Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116769632023
Integrated Circuit Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US116316742023
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites