Panagiotis Charilaos Filippou

11 Patents

• US125818682026

  Half Metallic Heusler Multilayers with Perpendicular Magnetic Anisotropy

  Samsung Electronics Co., Ltd.

  0 cites
• US123175082025

  Tuning Perpendicular Magnetic Anisotropy of Heusler Compound in MRAM Devices

  SAMSUNG ELECTRONICS CO., Ltd

  0 cites
• US122741792025

  Seed Layer for Enhancing Tunnel Magnetoresistance with Perpendicularly Magnetized Heusler Films

  International Business Machines Corporation

  0 cites
• US121364472024

  Tetragonal Half Metallic Half-heusler Compounds

  Samsung Electronics Co., Ltd.

  0 cites
• US120945082024

  Magnetic Tunneling Junction Switching with Parallel Spin-momentum Locked Spin Current

  Samsung Electronics Co., Ltd.

  0 cites
• US119251242024

  Insertion Layers for Perpendicularly Magnetized Heusler Layers with Reduced Magnetic Damping

  Samsung Electronics Co., Ltd.

  0 cites
• US118043212023

  Tunable Templating Layers for Perpendicularly Magnetized Heusler Films

  Samsung Electronics Co., Ltd.

  0 cites
• US117565782023

  Ferrimagnetic Heusler Compounds with High Spin Polarization

  Samsung Electronics Co., Ltd.

  0 cites
• US117514862023

  Templating Layers for Perpendicularly Magnetized Heusler Films/compounds

  Samsung Electronics Co., Ltd.

  0 cites
• US116659792023

  Magnetic Junctions Having Enhanced Tunnel Magnetoresistance and Utilizing Heusler Compounds

  Samsung Electronics Co., Ltd.

  0 cites
• US115577212023

  Heusler Compounds with Non-magnetic Spacer Layer for Formation of Synthetic Anti-ferromagnets (SAF)

  Samsung Electronics Co., Ltd.

  0 cites