7 Patents
- US121547862024Method for Modifying a Strain State of at Least One Semiconductor Layer
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites - US120405952024Optoelectronic Device Comprising a Semiconductor Layer Based on Gesn Having a Single-crystal Portion with a Direct Band Structure and an Underlying Barrier Region
Commissariat à L'energie Atomique Et Aux Energies Alternatives
0 cites - US119731182024Method for Forming Ohmic Contacts, Particularly of Ni(gesn) Type Implementing Laser Annealing
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites - US119011942024Method of Forming a Porous Portion in a Substrate
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites - US118481912023RF Substrate Structure and Method of Production
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites - US117696872023Method for Layer Transfer with Localised Reduction of a Capacity to Initiate a Fracture
COMMISSARIAT à L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
0 cites - US116108062023Multilayer Stack of Semiconductor-on-insulator Type, Associated Production Process, and Radio Frequency Module Comprising It
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
0 cites