5 Patents
- US126044942026Gate End Cap and Boundary Placement in Transistor Structures for N-metal Oxide Semiconductor (N-MOS) Performance Tuning
Intel Corporation
0 cites - US124396692025Co-deposition of Titanium and Silicon for Improved Silicon Germanium Source and Drain Contacts
Intel Corporation
0 cites - US124263422025Low Germanium, High Boron Silicon Rich Capping Layer for PMOS Contact Resistance Thermal Stability
Intel Corporation
0 cites - US122951702025Fabrication of Gate-all-around Integrated Circuit Structures Having Additive Metal Gates and Gate Dielectrics with a Dipole Layer
Intel Corporation
0 cites - US121130682024Fabrication of Gate-all-around Integrated Circuit Structures Having Additive Metal Gates
Intel Corporation
0 cites