20 Patents
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- US125506362026Support Substrate Made of Silicon Suitable for Radiofrequency Applications and Associated Manufacturing Method
Applied Materials Inc.
0 cites - US124697432025Method for Preparing a Thin Layer That Includes Forming a Weakened Zone in a Central Portion of a Donor Substrate That Does Not Extend Into a Peripheral Portion of the Donor Substrate and Initiating and Propagating a Splitting Wave in the Weakened Zone That Does Completely Not Propagate Through the Peripheral Portion
Commissariat à L'énergie Atomique Et Aux éNergies Alternatives
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- US121430932024Substrate for a Temperature-compensated Surface Acoustic Wave Device or Volume Acoustic Wave Device
Soitec
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- US120026972024Method for Detecting the Splitting of a Substrate Weakened by Implanting Atomic Species
Soitec
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- US118551202023Substrate for a Front-side-type Image Sensor and Method for Producing Such a Substrate
SOITEC
0 cites - US117110652023Substrate for a Temperature-compensated Surface Acoustic Wave Device or Volume Acoustic Wave Device
Soitec
0 cites - US116705402023Substrates Including Useful Layers
Commissariat à L'énergie Atomique Et Aux éNergies Alternatives
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