28 Patents
- US125637792026Gate-all-around Integrated Structures Having Gate Height Reduction and Dielectric Capping Material with Shoulder Portions Inside Gate Stack
Intel Corporation
0 cites - 0 cites
- US124023492025Gate-all-around Integrated Circuit Structures Having Devices with Channel-to-substrate Electrical Contact
Intel Corporation
0 cites - US123693922025Fabrication of Gate-all-around Integrated Circuit Structures Having Pre-spacer Deposition Cut Gates
Intel Corporation
0 cites - 0 cites
- US123100602025Gate-all-around Integrated Circuit Structures Having Uniform Threshold Voltages and Tight Gate Endcap Tolerances
Intel Corporation
0 cites - US122951702025Fabrication of Gate-all-around Integrated Circuit Structures Having Additive Metal Gates and Gate Dielectrics with a Dipole Layer
Intel Corporation
0 cites - US122887892025Gate-all-around Integrated Circuit Structures Having Devices with Source/drain-to-substrate Electrical Contact
Intel Corporation
0 cites - 0 cites
- US122727372025Gate-all-around Integrated Circuit Structures Having Adjacent Structures for Sub-fin Electrical Contact
Intel Corporation
0 cites - US121991432025Gate-all-around Integrated Circuit Structures Having Removed Substrate
Intel Corporation
0 cites - US121425662024Method of Forming Stacked Trench Contacts and Structures Formed Thereby
Intel Corporation
0 cites - US121130682024Fabrication of Gate-all-around Integrated Circuit Structures Having Additive Metal Gates
Intel Corporation
0 cites - US120516982024Fabrication of Gate-all-around Integrated Circuit Structures Having Molybdenum Nitride Metal Gates and Gate Dielectrics with a Dipole Layer
Intel Corporation
0 cites - 0 cites
- US119904722024Fabrication of Gate-all-around Integrated Circuit Structures Having Pre-spacer Deposition Cut Gates
Intel Corporation
0 cites - US119088562024Gate-all-around Integrated Circuit Structures Having Devices with Source/drain-to-substrate Electrical Contact
Intel Corporation
0 cites - US118376412023Gate-all-around Integrated Circuit Structures Having Adjacent Deep via Substrate Contacts for Sub-fin Electrical Contact
Intel Corporation
0 cites - US118241162023Gate-all-around Integrated Circuit Structures Having Devices with Channel-to-substrate Electrical Contact
Intel Corporation
0 cites - US117990092023Gate-all-around Integrated Circuit Structures Having Adjacent Structures for Sub-fin Electrical Contact
Intel Corporation
0 cites - 0 cites
- US117709792023Conductive Alloy Layer in Magnetic Memory Devices and Methods of Fabrication
Intel Corporation
0 cites - 0 cites
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- US117216302023Method of Forming Stacked Trench Contacts and Structures Formed Thereby
Intel Corporation
0 cites - 0 cites
- US116161922023Magnetic Memory Devices with a Transition Metal Dopant at an Interface of Free Magnetic Layers and Methods of Fabrication
Intel Corporation
0 cites - 0 cites