Norihiro Hoshino

5 Patents

• US122975622025

  Silicon Carbide Ingot Including Screw Dislocations

  3)TOYOTA JIDOSHA KABUSHIKI KAISHA

  0 cites
• US122814102025

  Method and Apparatus for Manufacturing Silicon Carbide Single Crystal, and Silicon Carbide Single Crystal Ingot

  DENSO CORPORATION

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• US122528082025

  Silicon Carbide Single Crystal Wafer, and Methods for Manufacturing Silicon Carbide Single Crystal Ingot and the Silicon Carbide Single Crystal Wafer

  DENSO CORPORATION

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• US120717092024

  Methods for Manufacturing Silicon Carbide Single Crystal Ingot and Silicon Carbide Single Crystal Wafer

  DENSO CORPORATION

  0 cites
• US118460402023

  Silicon Carbide Single Crystal

  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

  0 cites