Patents/Inventors

Nidhi Nidhi

Hillsboro, ORUS25 patents

26 Patents

US125686822026
Nanoribbon Thick Gate Device with Hybrid Dielectric Tuning for High Breakdown and VT Modulation
Intel Corporation
0 cites
US124531452025
Single Gated 3D Nanowire Inverter for High Density Thick Gate Soc Applications
Intel Corporation
0 cites
US123693582025
Co-integrated High Performance Nanoribbon Transistors with High Voltage Thick Gate Finfet Devices
Intel Corporation
0 cites
US123494112025
Gate-all-around Integrated Circuit Structures Having Dual Nanoribbon Channel Structures
Intel Corporation
0 cites
US122496222025
Nanoribbon Thick Gate Devices with Differential Ribbon Spacing and Width for SOC Applications
Intel Corporation
0 cites
US121487572024
Integration of Si-based Transistors with Non-si Technologies by Semiconductor Regrowth Over an Insulator Material
Intel Corporation
0 cites
US120403952024
High Voltage Extended-drain MOS (EDMOS) Nanowire Transistors
Intel Corporation
0 cites
US120276132024
III-N Transistor Arrangements for Reducing Nonlinearity of Off-state Capacitance
Intel Corporation
0 cites
US119964032024
ESD Diode Solution for Nanoribbon Architectures
Intel Corporation
0 cites
US118815112024
Superlattice FINFET with Tunable Drive Current Capability
Intel Corporation
0 cites
US118627032024
Gate-all-around Integrated Circuit Structures Having Dual Nanoribbon Channel Structures
Intel Corporation
0 cites
US118483622023
III-N Transistors with Contacts of Modified Widths
Intel Corporation
0 cites
US118308182023
Semiconductor Device Having Metal Interconnects with Different Thicknesses
Intel Corporation
0 cites
US117913802023
Single Gated 3D Nanowire Inverter for High Density Thick Gate SOC Applications
Intel Corporation
0 cites
US117570272023
E-D Mode 2DEG FET with Gate Spacer to Locally Tune VT and Improve Breakdown
Intel Corporation
0 cites
US117373622023
Harvesting Energy in an Integrated Circuit Using the Seebeck Effect
Intel Corporation
0 cites
US117157902023
Charge-induced Threshold Voltage Tuning in III-N Transistors
Intel Corporation
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US116887882023
Transistor Gate Structure with Hybrid Stacks of Dielectric Material
Intel Corporation
0 cites
US116707092023
III-N Transistors with Local Stressors for Threshold Voltage Control
Intel Corporation
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US116582172023
Transistors with Ion- or Fixed Charge-based Field Plate Structures
Intel Corporation
0 cites
US116521432023
III-N Transistors Integrated with Thin-film Transistors Having Graded Dopant Concentrations And/or Composite Gate Dielectrics
Intel Corporation
0 cites
US116265132023
Antenna Gate Field Plate on 2DEG Planar FET
Intel Corporation
0 cites
US116109712023
Cap Layer on a Polarization Layer to Preserve Channel Sheet Resistance
Intel Corporation
0 cites
US115879242023
Integration of Passive Components in III-N Devices
Intel Corporation
0 cites
US115880372023
Planar Transistors with Wrap-around Gates and Wrap-around Source and Drain Contacts
Intel Corporation
0 cites
US115813132023
Integration of III-N Transistors and Non-iii-n Transistors by Semiconductor Regrowth
Intel Corporation
0 cites