5 Patents
- US124577712025Plug and Recess Process for Dual Metal Gate on Stacked Nanoribbon Devices
Intel Corporation
0 cites - US122306352025Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Selective Bottom-up Approach
Intel Corporation
0 cites - US121837392024Ribbon or Wire Transistor Stack with Selective Dipole Threshold Voltage Shifter
Intel Corporation
0 cites - US120466522024Plug and Recess Process for Dual Metal Gate on Stacked Nanoribbon Devices
Intel Corporation
0 cites - US118626362024Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Selective Bottom-up Approach
Intel Corporation
0 cites