Patents/Inventors

Nicolas Loubet

Guilderland, NYUS29 patents

31 Patents

US124761362025
Liner-less via Contact
International Business Machines Corporation
0 cites
US124648132025
Semiconductor Device Having Hybrid Middle of Line Contacts
International Business Machines Corporation
0 cites
US124143282025
Co-integrating Gate-all-around Nanosheet Transistors and Comb-nanosheet Transistors
International Business Machines Corporation
0 cites
US124083682025
Method of Making a Semiconductor Device Using a Dummy Gate
Bell Semiconductor, LLC
0 cites
US123362942025
Gate-cut and Separation Techniques for Enabling Independent Gate Control of Stacked Transistors
International Business Machines Corporation
0 cites
US123175552025
Gate-all-around Nanosheet Field Effect Transistor Integrated with Fin Field Effect Transistor
International Business Machines Corporation
0 cites
US123101002025
Dielectric Reflow for Boundary Control
International Business Machines Corporation
0 cites
US122782342025
Multi-fin FINFET Device Including Epitaxial Growth Barrier on Outside Surfaces of Outermost Fins and Related Methods
Bell Semiconductor, LLC
0 cites
US122680202025
Source or Drain Template for Reducing Strain Loss in Spaced-apart Nanosheet Channels
International Business Machines Corporation
0 cites
US122611732025
Semiconductor Device with Strained Channel
International Business Machines Corporation
0 cites
US122119362025
Strained-channel Fin Fets
STMICROELECTRONICS, Inc.
0 cites
US121913092025
Method to Induce Strain in Finfet Channels from an Adjacent Region
Bell Semiconductor, LLC
0 cites
US121660422024
Stacked Nanosheet Gate-all-around Device Structures
International Business Machines Corporation
0 cites
US121549712024
Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Adeia Semiconductor Solutions LLC
0 cites
US121007462024
Gate-all-around Field Effect Transistor with Bottom Dielectric Isolation
International Business Machines Corporation
0 cites
US120876912024
Semiconductor Structures with Backside Gate Contacts
International Business Machines Corporation
0 cites
US120403732024
Liner-free Resistance Contacts and Silicide with Silicide Stop Layer
International Business Machines Corporation
0 cites
US119844932024
Formation of Nanosheet Transistor Channels Using Epitaxial Growth
International Business Machines Corporation
0 cites
US119489432024
Method to Induce Strain in FINFET Channels from an Adjacent Region
Bell Semiconductor, LLC
0 cites
US119359292024
High Aspect Ratio Shared Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118943612024
Co-integrated Logic, Electrostatic Discharge, and Well Contact Devices on a Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118944362024
Gate-all-around Monolithic Stacked Field Effect Transistors Having Multiple Threshold Voltages
International Business Machines Corporation
0 cites
US116827152023
Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Tessera LLC
0 cites
US116705542023
Method to Co-integrate Sige and Si Channels for Finfet Devices
Bell Semiconductor, LLC
0 cites
US116396972023
Method for Controlling an Internal Combustion Engine
VITESCO TECHNOLOGIES GmbH
0 cites
US116108862023
Multi-fin FINFET Device Including Epitaxial Growth Barrier on Outside Surfaces of Outermost Fins and Related Methods
Bell Semiconductor, LLC
0 cites
US116056722023
Steep-switch Field Effect Transistor with Integrated Bi-stable Resistive System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115879282023
Method to Induce Strain in Finfet Channels from an Adjacent Region
Bell Semiconductor, LLC
0 cites
US115750032023
Creation of Stress in the Channel of a Nanosheet Transistor
Commissariat A L'energie Atomique Et Aux Energies Alternatives
0 cites
US115750242023
Forming Gate Last Vertical FET with Self-aligned Spacers and Junctions
International Business Machines Corporation
0 cites
US115693842023
Method to Induce Strain in 3-D Microfabricated Structures
STMICROELECTRONICS, Inc.
0 cites