6 Patents
- US124396272025Gate Structures to Enable Lower Subthreshold Slope in Gallium Nitride-based Transistors
Intel Corporation
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- US117569982023Source-channel Junction for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites - US116950812023Channel Layer Formation for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites