Naushad K. Variam

5 Patents

• US123004942025

  Ion Implantation Process to Form Punch Through Stopper

  Applied Materials, Inc.

  0 cites
• US122306912025

  Three Dimensional Device Formation Using Early Removal of Sacrificial Heterostructure Layer

  Applied Materials, Inc.

  0 cites
• US119488322024

  Bottom Implant and Airgap Isolation for Nanosheet Semiconductor Devices

  Applied Materials, Inc.

  0 cites
• US119423612024

  Semiconductor Device Cavity Formation Using Directional Deposition

  Applied Materials, Inc.

  0 cites
• US117788322023

  Wordline Contact Formation in NAND Devices

  Applied Materials, Inc.

  0 cites