3 Patents
- US124513482025Method and Device for Manufacturing Sic Substrate, and Method for Reducing Macro-step Bunching of Sic Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US120657582024Method for Manufacturing a Sic Substrate by Simultaneously Forming a Growth Layer on One Surface and Etching Another Surface of a Sic Base Substrate
TOYOTA TSUSHO CORPORATION
0 cites - US119729492024Sic Substrate Manufacturing Method and Manufacturing Device, and Method for Reducing Work-affected Layer in Sic Substrate
TOYOTA TSUSHO CORPORATION
0 cites