Patents/Inventors

Natalia Lavrovskaya

Sunnyvale, CAUS3 patents

4 Patents

US125016332025
Breakdown Diodes and Methods of Making the Same
TEXAS INSTRUMENTS INCORPORATED
0 cites
US121131282024
DMOS Transistor Having Thick Gate Oxide and STI and Method of Fabricating
TEXAS INSTRUMENTS INCORPORATED
0 cites
US117914052023
Transistor Having an Emitter Region with a Silicide Spaced Apart from a Base Contact
Texas Instruments Incorporated
0 cites
US115880192023
Bipolar Junction Transistor with Constricted Collector Region Having High Gain and Early Voltage Product
Texas Instruments Incorporated
0 cites