7 Patents
- US124777572025Capacitor, Semiconductor Device Comprising the Capacitor, and Method of Fabricating the Capacitor
Samsung Electronics Co., Ltd.
0 cites - US124143132025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124083532025Device with Dielectric Metal Oxide Layers and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123566402025High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US120716902024Thin Film Structure Including Dielectric Material Layer, and Method of Manufacturing the Same, and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US118699262024High-k Capacitor Dielectric Having a Metal Oxide Area Comprising Boron, Electrical Device, and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US116932372023Phase Shift Device Including Metal-dielectric Composite Structure
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
0 cites