3 Patents
- US120949392024Semiconductor Device Having a Gate Electrode, an Interlayer Insulating Film and a Barrier Metal Provided in a Trench
FUJI ELECTRIC CO., Ltd.
0 cites - US120807622024Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
FUJI ELECTRIC CO., Ltd.
0 cites - US119294002024Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
FUJI ELECTRIC CO., Ltd.
0 cites