Naoki Hase

6 Patents

• US126107472026

  Magnetic Tunneling Junction Device, Memory Device Including the Same, and Method of Manufacturing the Magnetic Tunneling Junction Device

  Samsung Electronics Co., Ltd.

  0 cites
• US121503872024

  Magnetic Tunneling Junction Device and Memory Device Including the Same

  Samsung Electronics Co., Ltd.

  0 cites
• US120804592024

  Synthetic Antiferromagnet, Magnetic Tunneling Junction Device Including the Synthetic Antiferromagnet, and Memory Device Including the Magnetic Tunneling Junction Device

  Samsung Electronics Co., Ltd.

  0 cites
• US120529302024

  Magnetic Tunneling Junction Device and Memory Device Including the Same

  Samsung Electronics Co., Ltd.

  0 cites
• US119356772024

  Magnetic Device

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US115517372023

  Magnetic Storage Element and Electronic Apparatus

  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

  0 cites