Naohiro Hosoda

7 Patents

• US125503282026

  Three-dimensional Memory Device Including a Mid-stack Source Layer and Methods for Forming the Same

  Sandisk Technologies, Inc.

  0 cites
• US124761922025

  Three-dimensional Memory Device Including a Drain Contact Etch-stop Dielectric Layer and Methods for Forming the Same

  Sandisk Technologies, Inc.

  0 cites
• US124565212025

  Sub-block Separation in NAND Memory Through Word Line Based Selectors

  Sandisk Technologies, Inc.

  0 cites
• US124378172025

  Sub-block Separation in NAND Memory Through Word Line Based Selectors

  Sandisk Technologies, Inc.

  0 cites
• US123877892025

  X-direction Divided Sub-block Mode in NAND

  Sandisk Technologies, Inc.

  0 cites
• US123549442025

  Three-dimensional Memory Device Containing Plural Metal Oxide Blocking Dielectric Layers and Method of Making Thereof

  Sandisk Technologies, Inc.

  0 cites
• US118942982024

  Three-dimensional Memory Device Containing Amorphous and Crystalline Blocking Dielectric Layers

  SANDISK TECHNOLOGIES LLC

  0 cites