14 Patents
- US126158182026Semiconductor Transistor Devices Including Alternatively Stacked Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites - US125573622026Semiconductor Device Including Source/drain Pattern with Varied Germanium Concentrations
SAMSUNG ELECTRONICS CO., Ltd.
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- US124777962025Semiconductor Device Including a Vertically Stacked Channel Pattern and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US124263592025Semiconductor Device Including Source/drain Regions Having Triangular Tip Regions
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123815022025Home Appliance Including Motor and Control Method for Home Appliance
SAMSUNG ELECTRONICS CO., Ltd.
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- US123241952025Multi-channel Field Effect Transistors with Enhanced Multi-layered Source/drain Regions
Samsung Electronics Co., Ltd.
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