5 Patents
- US125936742026Semiconductor Transistor Device Including Backside Contact Structure Vertically Between Backside Power Rail and Source/drain Structure and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125884892026Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US124631362025Integrated Circuit Devices Including Backside Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US122552482025Semiconductor Device Including Backside Contact Structure Having Positive Slope and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122118372025Semiconductor Device Including Gate Contact Structure Formed from Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites