Patents/Inventors

Myunggil Kang

Suwon-siKR22 patents

19 Patents

US125751352026
Semiconductor Devices Including Gate-all-around Type Field Effect Transistor
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125433362026
Methods of Manufacturing Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US125325242026
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123826682025
Semiconductor Device Including Plurality of Channel Layers
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123289092025
Semiconductor Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US122740922025
Resistance Measuring Structures of Stacked Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122666592025
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122612082025
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122496062025
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122119422025
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US119554752024
Resistor with Doped Regions and Semiconductor Devices Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119489422024
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119013632024
Resistance Measuring Structures of Stacked Devices
Samsung Electronics Co., Ltd.
0 cites
US118880392024
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117283882023
Method for Manufacturing a Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117157352023
Resistor with Doped Regions
Samsung Electronics Co., Ltd.
0 cites
US117055212023
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US116316742023
Integrated Circuit Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115749052023
Resistor with Doped Regions and Semiconductor Devices Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites