Patents/Inventors

Mu-tien Chang

Santa Clara, CAUS11 patents

12 Patents

US124684452025
Coordinated In-module RAS Features for Synchronous DDR Compatible Memory
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122484022025
Bandwidth Boosted Stacked Memory
Samsung Electronics Co., Ltd.
0 cites
US122423442025
DRAM Assist Error Correction Mechanism for DDR SDRAM Interface
Samsung Electronics Co., Ltd.
0 cites
US121977262025
3d-stacked Memory with Reconfigurable Compute Logic
Samsung Electronics Co., Ltd.
0 cites
US121895462025
Asynchronous Communication Protocol Compatible with Synchronous DDR Protocol
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121473602024
Asynchronous Communication Protocol Compatible with Synchronous DDR Protocol
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120328282024
Coordinated In-module RAS Features for Synchronous DDR Compatible Memory
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119409222024
ISA Extension for High-bandwidth Memory
Samsung Electronics Co., Ltd.
0 cites
US117896102023
3d-stacked Memory with Reconfigurable Compute Logic
Samsung Electronics Co., Ltd.
0 cites
US116252962023
DRAM Assist Error Correction Mechanism for DDR SDRAM Interface
Samsung Electronics Co., Ltd.
0 cites
US115689202023
Dual Row-column Major Dram
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115564762023
ISA Extension for High-bandwidth Memory
Samsung Electronics Co., Ltd.
0 cites