17 Patents
- US125987662026Contact Interface Engineering for Reducing Contact Resistance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124314122025Contact Plugs for Semiconductor Device and Method of Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124262912025Contact and via Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123896742025Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123622812025Partial Barrier Free Vias for Cobalt-based Interconnects and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123477252025Semiconductor Structure with Material Modification and Low Resistance Plug
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123410132025Method and Structure for Barrier-less Plug
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122666882025Semiconductor Device with Source/drain Contact Formed Using Bottom-up Deposition
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122667092025Selective Dual Silicide Formation Using a Maskless Fabrication Process Flow
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120515922024Method and Structure for Barrier-less Plug
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119233672024Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US118548712023Semiconductor Structure with Material Modification and Low Resistance Plug
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118238962023Conductive Structure Formed by Cyclic Chemical Vapor Deposition
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117769102023Partial Barrier Free Vias for Cobalt-based Interconnects and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117568642023Contact Plugs for Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117496822023Selective Dual Silicide Formation Using a Maskless Fabrication Process Flow
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117157632023Method of Forming Metal Contact for Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites