11 Patents
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- US125000862025Method of Manufacturing a Metal Silicide Layer Above a Silicon Carbide Substrate, and Semiconductor Device Comprising a Metal Silicide Layer
INFINEON TECHNOLOGIES AG
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- US117640632023Silicon Carbide Device with Compensation Region and Method of Manufacturing
Infineon Technologies AG
0 cites - US117423842023Vertical Power Semiconductor Device Including a Field Stop Region Having a Plurality of Impurity Peaks
Infineon Technologies AG
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- US115521722023Silicon Carbide Device with Compensation Layer and Method of Manufacturing
Infineon Technologies AG
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