Mohammad Wahidur Rahman

2 Patents

• US118483592023

  Method of Forming Lateral Pn Junctions in Iii-nitrides Using P-type and N-type Co-doping and Selective P-type Activation and Deactivation

  Ohio State Innovation Foundation

  0 cites
• US118483892023

  Low Turn on and High Breakdown Voltage Lateral Diode

  Ohio State Innovation Foundation

  0 cites