Mohamed N. Darwish

3 Patents

• US122848172025

  Trench-gated Heterostructure and Double-heterostructure Active Devices

  Maxpower Semiconductor Inc.

  0 cites
• US120574822024

  MOSFET with Distributed Doped P-shield Zones Under Trenches

  Maxpower Semiconductor, Inc.

  0 cites
• US118880472024

  Lateral Transistors and Methods with Low-voltage-drop Shunt to Body Diode

  Maxpower Semiconductor, Inc.

  0 cites