Moeko Matsubara

3 Patents

• US125097952025

  Method for Manufacturing Aluminum Nitride Substrate, Aluminum Nitride Substrate, and Method for Forming Aluminum Nitride Layer

  TOYOTA TSUSHO CORPORATION

  0 cites
• US123980382025

  Manufacturing Method of Modified Aluminum Nitride Raw Material, Modified Aluminum Nitride Raw Material, Manufacturing Method of Aluminum Nitride Crystals, and Downfall Defect Prevention Method

  TOYOTA TSUSHO CORPORATION

  0 cites
• US123259362025

  Aluminum Nitride Substrate Manufacturing Method, Aluminum Nitride Substrate, and Method of Removing Strain Layer Introduced Into Aluminum Nitride Substrate by Laser Processing

  TOYOTA TSUSHO CORPORATION

  0 cites